Integrated circuit device

ABSTRACT

An integrated circuit device includes a substrate having a first intellectual property (IP) core including a cell region and a first edge dummy region, fin-type active regions protruding from the cell region, dummy fin-type active regions protruding from the first edge dummy region, gate lines extending, over the cell region of the substrate, the gate lines including two adjacent gate lines spaced apart from each other with a first pitch and two adjacent gate lines spaced apart with a second pitch greater than the first pitch, dummy gate lines over the first edge dummy region of the substrate and equally spaced apart from each other with the first pitch.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation application of U.S. application Ser.No. 16/904,843 filed Jun. 18, 2020, which claims priority under 35U.S.C. § 119 to Korean Patent Application No. 10-2019-0157690, filed onNov. 29, 2019, in the Korean Intellectual Property Office, thedisclosure of each of which is incorporated by reference herein in itsentirety.

BACKGROUND

The inventive concept relates to an integrated circuit device, and moreparticularly, to an integrated circuit device including a fin-typeactive region.

Along with the development of electronic technology, integrated circuitdevices have been rapidly down-scaled, and thus, line-widths and pitchesof components of integrated circuit devices, for example, line-widthsand pitches of fin-type active regions and gate lines, have beenreduced.

Because integrated circuit devices require fast operation speed andoperation accuracy, there is a need to develop techniques allowingcomponents of integrated circuit devices to be formed with uniformline-widths and pitches even when the line-widths and pitches of thecomponents thereof are reduced.

SUMMARY

The inventive concept provides an integrated circuit device having astructure allowing components thereof to be formed with uniformline-widths and pitches even when the line-widths and pitches of thecomponents thereof are reduced along with down-scaling of the integratedcircuit device.

According to an exemplary embodiment, an integrated circuit deviceincludes a substrate having a first intellectual property (IP) core,which is defined by a separation region and comprises a first cellregion and a first edge dummy region, a plurality of first fin-typeactive regions protruding in a vertical direction from the first cellregion of the substrate and extending parallel to each other in a firsthorizontal direction, the plurality of first fin-type active regionsincluding two adjacent first fin-type active regions that are spacedapart, in a second horizontal direction, from each other with a firstpitch and two adjacent first fin-type active regions that are spacedapart, in the second horizontal direction, from each other with a secondpitch greater than the first pitch, a plurality of first dummy fin-typeactive regions protruding in the vertical direction from the first edgedummy region of the substrate and extending parallel to each other inthe first horizontal direction, the plurality of first dummy fin-typeactive regions being equally spaced apart from each other with the firstpitch in the second horizontal direction, a plurality of first gatelines extending, over the first cell region of the substrate, parallelto each other in the second horizontal direction that intersects thefirst horizontal direction, and a plurality of first dummy gate linesextending, over the first edge dummy region of the substrate, parallelto each other in the second horizontal direction.

According to an exemplary embodiment of the present inventive concept,an integrated circuit device includes a substrate having an IP core,which is defined by a separation region and has at least two first edgesextending in a first horizontal direction and at least two second edgesextending in a second horizontal direction that intersects the firsthorizontal direction, the IP core comprising a cell region and an edgedummy region that is arranged to extend along the at least two secondedges, a plurality of fin-type active regions protruding in a verticaldirection from the substrate and extending parallel to each other in thefirst horizontal direction, a plurality of dummy fin-type active regionsin the edge dummy region, a plurality of gate lines extending, over thesubstrate, parallel to each other in the second horizontal direction,which intersects the first horizontal direction, a plurality of dummygate lines in the edge dummy region. In the edge dummy region, each ofthe plurality of dummy fin-type active regions intersects all of theplurality of dummy gate lines, and each of the plurality of dummy gatelines intersects all of the plurality of dummy fin-type active regions.

According to an exemplary embodiment of the present inventive concept,an integrated circuit device includes a substrate having an IP core,which is defined by a separation region and has at least two first edgesextending in a first horizontal direction and at least two second edgesextending in a second horizontal direction that intersects the firsthorizontal direction, the IP core including a cell region and an edgedummy region that is arranged to extend along the at least two secondedges, a plurality of fin-type active regions on the cell region, theplurality of fin-type active regions protruding in a vertical directionfrom the cell region and extending parallel to each other in the firsthorizontal direction, and a plurality of dummy fin-type active regionson the edge dummy region, the plurality of dummy fin-type active regionsprotruding in the vertical direction from the edge dummy region andextending parallel to each other in the first horizontal direction, theplurality of fin-type active regions including two fin-type activeregions adjacent to each other with a first pitch in the secondhorizontal direction, and two fin-type active regions adjacent to eachother with a second pitch greater than the first pitch in the secondhorizontal direction, and the plurality of dummy fin-type active regionsbeing arranged parallel to each other and equally spaced apart from eachother with the first pitch in the second horizontal direction, a firstdevice isolation film covering lower portions of sidewalls of theplurality of fin-type active regions and having a bottom surface at afirst vertical level, a second device isolation film having a bottomsurface at a second vertical level lower than the first vertical leveland arranged to extend along a first portion of an edge of the edgedummy region, the first portion directly adjacent to the separationregion, a plurality of gate lines extending, over the substrate,parallel to each other in the second horizontal direction, whichintersects the first horizontal direction, and being equally spacedapart from each other with a third pitch in the first horizontaldirection, and a plurality of dummy gate lines in the edge dummy region,the plurality of dummy gate lines being arranged parallel to each otherand equally spaced apart from each other with the third pitch in thefirst horizontal direction.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the inventive concept will be more clearly understoodfrom the following detailed description taken in conjunction with theaccompanying drawings in which:

FIG. 1 is a planar layout diagram illustrating an integrated circuitdevice according to exemplary embodiments of the inventive concept;

FIG. 2 is a planar layout diagram illustrating an integrated circuitdevice according to exemplary embodiments of the inventive concept;

FIG. 3 is a planar layout diagram illustrating an integrated circuitdevice according to exemplary embodiments of the inventive concept;

FIG. 4 is a planar layout diagram illustrating an integrated circuitdevice according to exemplary embodiments of the inventive concept;

FIG. 5 is an enlarged planar layout diagram illustrating a portion of anintegrated circuit device according to exemplary embodiments of theinventive concept;

FIG. 6 is an enlarged planar layout diagram illustrating a portion of anintegrated circuit device according to exemplary embodiments of theinventive concept;

FIG. 7 is an enlarged planar layout diagram illustrating a portion of anintegrated circuit device according to exemplary embodiments of theinventive concept;

FIG. 8 is an enlarged planar layout diagram illustrating a portion of anintegrated circuit device according to exemplary embodiments of theinventive concept;

FIG. 9 is an enlarged planar layout diagram illustrating a portion of anintegrated circuit device according to exemplary embodiments of theinventive concept;

FIG. 10 is an enlarged planar layout diagram illustrating a portion ofan integrated circuit device according to exemplary embodiments of theinventive concept;

FIGS. 11 to 18 are cross-sectional views illustrating sequentialprocesses of a method of manufacturing an integrated circuit device,according to exemplary embodiments of the inventive concept, and FIG. 19is a cross-sectional view illustrating an integrated circuit deviceaccording to an exemplary embodiment of the inventive concept; and

FIG. 20 is a cross-sectional view illustrating an integrated circuitdevice according to an exemplary embodiment of the inventive concept.

DETAILED DESCRIPTION OF THE EMBODIMENTS

FIG. 1 is a planar layout diagram illustrating an integrated circuitdevice according to exemplary embodiments of the inventive concept.

Referring to FIG. 1 , an integrated circuit device 10 may include aplurality of function blocks FB defined by a separation region SR. Theseparation region SR may extend between the plurality of function blocksFB in a first horizontal direction (X direction) and a second horizontaldirection (Y direction) that is perpendicular to the first horizontaldirection (X direction). Each of the plurality of function blocks FB maycorrespond to an intellectual property (IP) core such as a mainprocessing unit (MPU), a graphics processing unit (GPU), a communicationunit, an interface, or the like. For example, the integrated circuitdevice 10 may include a system-on-chip (SoC) in which the plurality offunction blocks FB each performing an independent function areimplemented (i.e., integrated) into one chip. As used herein,intellectual property (IP) core may be used to denote self-containeddiscrete units that provide a macro function to the system. Thoseskilled in the art will appreciate that the disclosed intellectualproperty core is physically implemented by electronic (or optical)circuits, such as logic circuits, discrete components, microprocessors,hard-wired circuits, memory elements, wiring connections, buses,communication links, and the like, which may be formed usingsemiconductor-based fabrication techniques or other manufacturingtechnologies. In designing various integrated circuits, the IP core maybe reusable to design them.

In some exemplary embodiments, all or some of the plurality of functionblocks FB may each include a plurality of logic cells. Each logic cellmay include a plurality of circuit elements such as a transistor, aregister, and the like in various configurations. Each logic cell mayconstitute, for example, a logic gate such as an AND gate, a NAND gate,an OR gate, a NOR gate, an exclusive OR (XOR) gate, an exclusive NOR(XNOR) gate, an inverter (INV), an adder (ADD), a buffer (BUF), a delay(DLY), a filter (FIL), a multiplexer (MXT/MXIT), an OR/AND/INVERTER(OAI), an AND/OR (AO), an AND/OR/INVERTER (AOI), a D flip-flop, a resetflip-flop, a master-slave flip-flop, a latch, or the like, and eachlogic cell may also constitute a standard cell, such as a counter, abuffer, or the like, which performs an intended logical function.

In some exemplary embodiments, some of the plurality of function blocksFB may each be a memory unit having a memory cell array. The memory cellarray may include, for example, an array including memory cells having alarge capacity of several hundred megabytes (Mbytes) to severalgigabytes (Gbytes) or more. Each memory cell may include a volatilememory cell, a non-volatile memory cell, or a read-only memory (ROM)cell. The volatile memory cell may include, for example, a static randomaccess memory (SRAM) and/or a dynamic RAM (DRAM). The non-volatilememory cell may include, for example, a magneto-resistive RAM (MRAM), aphase-change RAM (PRAM), a resistive RAM (RRAM), and/or a flash memory.The ROM cell may include, for example, a programmable ROM (PROM) or anelectrically erasable programmable ROM (EEPROM).

In some exemplary embodiments, some of the plurality of function blocksFB may each include both a plurality of logic cells and a plurality ofmemory cells.

Each function block FB may have, in a plan view, a polygonal shape whichhas at least two first edges EGX extending in the first horizontaldirection (X direction) and at least two second edges EGY extending inthe second horizontal direction (Y direction). In some exemplaryembodiments, each of the plurality of function blocks FB may have arectangular shape in a plan view. The first horizontal direction (Xdirection) may be a lengthwise direction of a fin-type active region (FAof FIG. 5 ), and the second horizontal direction (Y direction) may be alengthwise direction of a gate line (GL of FIG. 5 ).

Each of the plurality of function blocks FB may include a cell region,and at least two edge dummy regions EDR that are arranged along at leasttwo edges of each function block FB, respectively. In an exemplaryembodiment, two edge dummy regions EDR of each function block EB may bespaced apart from each other in the first horizontal direction, and eachof the two edge dummy regions EDR may extend in the second horizontaldirection. The present invention is not limited thereto. In someexemplary embodiments, at least two edge dummy regions EDR of eachfunction block FB may have the same configuration (e.g., the samelocations where the dummy regions EDR are placed and the same lengthwisedirection). In some exemplary embodiments, some of the plurality offunction blocks FB may have no edge dummy regions EDR.

The cell region CR may be a region in which a plurality of transistorsfor constituting a logic cell and/or a memory cell are arranged. Forexample, a plurality of fin field effect transistors (FinFETs) may bearranged in the cell region CR.

The edge dummy region EDR may be arranged to extend along a second edgeEGY of each function block FB. A plurality of gate lines GL and aplurality of fin-type active regions FA may be arranged in the edgedummy region EDR such that the plurality of gate lines GL intersect withthe plurality of fin-type active regions FA. A gate line GL and afin-type active region FA, which are arranged in the edge dummy regionEDR, may be a dummy gate line and a dummy fin-type active region,respectively. The plurality of gate lines GL and the plurality offin-type active regions FA, which are arranged in the edge dummy regionEDR, will be described in detail with reference to FIGS. 5 to 10, 19,and 20 . As used herein, the term “dummy” is used to refer to acomponent that has the same or similar structure and shape as othercomponents but does not have a substantial function and exists only as apattern in the device.

The edge dummy region EDR may not be arranged to extend along a firstedge EGX of each function block FB. Here, that the edge dummy region EDRis not arranged to extend along the first edge EGX of each functionblock FB and is arranged to extend along the second edge EGY of eachfunction block FB means that the edge dummy region EDR is not arrangedin the first edge EGX except in a portion of the first edge EGX, whichis adjacent to the second edge EGY. For example, although an end of theedge dummy region EDR arranged to extend along the second edge EGY mayextend to the portion of the first edge EGX, which is adjacent to thesecond edge EGY, the end of the edge dummy region EDR arranged to extendalong the second edge EGY may not extend along the remaining portion ofthe first edge EGX.

Although FIG. 1 illustrates that the edge dummy region EDR is arrangedin all the second edges EGY of each of the plurality of function blocksFB included in the integrated circuit device 10, the inventive conceptis not limited thereto. In some embodiments, the edge dummy region EDRmay not be arranged in function blocks FB having no fin-type activeregion FA among the plurality of function blocks FB, for example, infunction blocks FB in which a FinFET is not arranged. For example, inthe function blocks FB in which the edge dummy region EDR is notarranged, the FinFET may not be arranged. Instead, a plurality of planartransistors may be arranged.

FIG. 2 is a planar layout diagram illustrating an integrated circuitdevice according to exemplary embodiments of the inventive concept.Regarding FIG. 2 , the same reference numerals of FIG. 1 respectivelydenote the same members, and repeated descriptions given with referenceto FIG. 1 may be omitted.

Referring to FIG. 2 , an integrated circuit device 10 a may include theplurality of function blocks FB defined by the separation region SR.Each function block FB may have, in a plan view, a polygonal shape whichhas at least two first edges EGX extending in the first horizontaldirection (X direction) and at least two second edges EGY extending inthe second horizontal direction (Y direction).

For example, some of the plurality of function blocks FB may each have arectangular shape in a plan view, and the others may each have apolygonal shape having three or more first edges EGX and three or moresecond edges EGY. For the convenience of description, FIG. 2 illustratesthat one of the plurality of function blocks FB has an L-shapedpolygonal shape. The inventive concept, however, is not limited thereto.In an exemplary embodiment, at least some of the plurality of functionblocks FB may have various polygonal shapes such as L-shapes, U-shapes,T-shapes, and the like.

In some of the plurality of function blocks FB, one of the first edgesEGX and the second edges EGY in one function block FB may be adjacent toa corresponding same-type edge in the other function block FB adjacentthereto, and in some others of the plurality of function blocks FB, atleast two of the first edges EGX and the second edges EGY in onefunction block FB may respectively face at least two correspondingsame-type edges in the other function block FB adjacent thereto.

Each of the plurality of function blocks FB may include the cell regionCR and the edge dummy region EDR that is arranged along a portion of theedge of each function block FB. In some embodiments, some of theplurality of function blocks FB may have no edge dummy region EDR.

The edge dummy region EDR may be arranged to extend along the secondedge EGY of the function block FB. The edge dummy region EDR may not bearranged to extend along the first edge EGY of the function block FB.For example, when the function block FB has, in a plan view, a polygonalshape having three or more first edges EGX and three or more secondedges EGY, the edge dummy region EDR may be arranged to extend alongeach of the three or more second edges EGY of the function block FB.

FIG. 3 is a planar layout diagram illustrating an integrated circuitdevice according to exemplary embodiments of the inventive concept.Regarding FIG. 3 , the same reference numerals as in FIGS. 1 and 2denote substantially the same members, and repeated descriptions givenwith reference to FIGS. 1 and 2 may be omitted.

Referring to FIG. 3 , an integrated circuit device 10 b may include onefunction block FB defined by the separation region SR. For example, theintegrated circuit device 10 b may include a logic semiconductor chip.In some exemplary embodiments, the integrated circuit device 10 b mayinclude a central processing unit (CPU), a controller, anapplication-specific integrated circuit (ASIC), or the like.

The separation region SR may extend along an edge of the integratedcircuit device 10 b in the first horizontal direction (X direction) andthe second horizontal direction (Y direction).

The function block FB may include the cell region CR and the edge dummyregion EDR that is arranged along a portion of the edge of the functionblock FB. The cell region CR may be a region in which a plurality oftransistors for constituting a logic cell are arranged. For example, aplurality of FinFETs may be arranged in the cell region CR.

The function block FB may have, in a plan view, a rectangular shapewhich has two first edges EGX extending in the first horizontaldirection (X direction) and two second edges EGY extending in the secondhorizontal direction (Y direction).

The edge dummy region EDR may be arranged to extend along each of thetwo second edges EGY of the function block FB. The edge dummy region EDRmay not be arranged to extend along the two first edges EGX of thefunction block FB.

FIG. 4 is a planar layout diagram illustrating an integrated circuitdevice according to embodiments of the inventive concept. Regarding FIG.4 , the same reference numerals as in FIGS. 1 to 3 respectively denotesubstantially the same members, and repeated descriptions given withreference to FIGS. 1 to 3 may be omitted.

Referring to FIG. 4 , an integrated circuit device 10 c may include onefunction block FB defined by the separation region SR. For example, theintegrated circuit device 10 c may include a logic semiconductor chip.

The separation region SR may extend along an edge of the integratedcircuit device 10 c in the first horizontal direction (X direction) andthe second horizontal direction (Y direction). For example, theseparation region SR may surround the cell region CR.

The function block FB may include the cell region CR and the edge dummyregion EDR that is arranged along a portion of the edge of the functionblock FB. The cell region CR may be a region in which a plurality oftransistors for constituting a logic cell are arranged. For example, aplurality of FinFETs may be arranged in the cell region CR.

The function block FB may have, in a plan view, a rectangular shapewhich has two first edges EGX, opposite to each other in the secondhorizontal direction (Y direction), extending in the first horizontaldirection (X direction) and two second edges EGY, opposite to each otherin the first horizontal direction (X direction), extending in the secondhorizontal direction (Y direction).

The edge dummy region EDR may be arranged to extend along each of thetwo second edges EGY of the function block FB. The edge dummy region EDRmay include a plurality of edge dummy regions EDR spaced apart from eachother to extend along at least one of the two second edges EGY of thefunction block FB. The edge dummy region EDR may not be arranged toextend along the two first edges EGX of the function block FB.

Although the edge dummy region EDR is shown in FIGS. 1 and 3 asextending continuously along the whole second edge EGY of each of theplurality of function blocks FB, the inventive concept is not limitedthereto. In an exemplary embodiment, in the integrated circuit device 10c as shown in FIG. 4 , the plurality of edge dummy regions EDR may bespaced apart from each other to extend along at least one second edgeEGY of at least one of the plurality of function blocks FB.

FIG. 5 is an enlarged planar layout diagram illustrating a portion of anintegrated circuit device according to embodiments of the inventiveconcept. FIG. 5 is an enlarged planar layout diagram illustrating aportion of the function block FB, in which the second edge EGY isarranged along an edge of each of the integrated circuit devices 10, 10a, and 10 b, the function block FB having been shown in FIGS. 1 to 3 ,and, regarding FIG. 5 , the same reference numerals as in FIGS. 1 to 3respectively denote substantially the same members and repeateddescriptions given with reference to FIGS. 1 to 3 may be omitted.

Referring to FIG. 5 , an integrated circuit device 1 may include atleast one function block FB defined by the separation region SR. In thefunction block FB, the plurality of fin-type active regions FA extendingin the first horizontal direction (X direction), and the plurality ofgate lines GL extending over the plurality of fin-type active regions FAin the second horizontal direction (Y direction) and intersecting atleast one of the plurality of fin-type active regions FA, may bearranged. The plurality of fin-type active regions FA may be spacedapart from each other in the second horizontal direction, and theplurality of gate lines GA may be spaced apart from each other in thefirst horizontal direction.

The function block FB may include the cell region CR and the edge dummyregion EDR that is arranged along a portion of the edge of the functionblock FB. The cell region CR may be a region in which a plurality oftransistors for constituting a logic cell and/or a memory cell arearranged. For example, a plurality of FinFETs may be arranged in thecell region CR. The edge dummy region EDR may be arranged to extendalong the second edge EGY of the function block FB.

At least some of the plurality of fin-type active regions FA in the cellregion CR and at least some of the plurality of gate lines GL in thecell region CR may be real fin-type active regions and real gate lines,respectively. Although all the plurality of fin-type active regions FAand all the plurality of gate lines GL, which are arranged in the cellregion CR shown in FIG. 5 , may be respectively real fin-type activeregions and real gate lines, the inventive concept is not limitedthereto. In some embodiments, some others of the plurality of fin-typeactive regions FA in the cell region CR and some others of the pluralityof gate lines GL in the cell region CR may be dummy fin-type activeregions and dummy gate lines, respectively.

For example, all the plurality of fin-type active regions FA and all theplurality of gate lines GL, which are arranged in the edge dummy regionEDR, may be dummy fin-type active regions and dummy gate lines,respectively.

Hereinafter, unless particularly stated for description convenience, thefin-type active region FA and the gate line GL, which are arranged inthe cell region CR, may be respectively referred to as a real fin-typeactive region FA and a real gate line GL, and the fin-type active regionFA and the gate line GL, which are arranged in the edge dummy regionEDR, may be respectively referred to as a dummy fin-type active regionFA and a dummy gate line GL. However, although a plurality of dummyfin-type active regions and a plurality of dummy gate lines may also befurther arranged in the cell region CR even without separatedescriptions, geometric features, such as line-widths and/or pitches, ofthe plurality of dummy fin-type active regions and the plurality ofdummy gate lines, which are arranged in the cell region CR, are notlimited to descriptions of geometric features, such as line-widthsand/or pitches, of the plurality of dummy fin-type active regions FA andthe plurality of dummy gate lines GL, which are arranged in the edgedummy region EDR, and the geometric features thereof in the cell regionCR may have other various values.

The plurality of fin-type active regions FA arranged in one edge dummyregion EDR, for example, the plurality of dummy fin-type active regionsFA, may extend parallel to each other in the first horizontal direction(X direction), and the plurality of gate lines GL arranged in one edgedummy region EDR, for example, the plurality of dummy gate lines GL, mayextend parallel to each other in the second horizontal direction (Ydirection). The plurality of dummy fin-type active regions FA may bearranged parallel to each other and equally spaced apart from each otherwith a first pitch PTY1 in the second horizontal direction (Ydirection). The plurality of dummy gate lines GL may be arrangedparallel to each other and equally spaced apart from each other with asecond pitch PTX in the first horizontal direction (X direction). Thefirst pitch PTY1 refers to a distance between an upper edge of afin-type active region and an upper edge of another fin-type activeregion adjacent thereto. The first pitch PTY1 may be the same as thecenter-to-center distance of two fin-type active regions adjacent toeach other.

In some embodiments, in one edge dummy region EDR, each of the pluralityof dummy fin-type active regions FA may intersect all of the pluralityof dummy gate lines GL, and each of the plurality of dummy gate lines GLmay intersect all of the plurality of dummy fin-type active regions FA.

The plurality of fin-type active regions FA in the cell region CR (i.e.,a plurality of real fin-type active regions FA) may extend parallel toeach other in the first horizontal direction (X direction), and theplurality of gate lines GL in the cell region CR (i.e., a plurality ofreal gate lines GL) may extend parallel to each other in the secondhorizontal direction (Y direction). Some of the plurality of realfin-type active regions FA may be arranged parallel to each other andspaced apart from each other with the first pitch PTY1 in the secondhorizontal direction (Y direction), whereas at least two others thereofmay be arranged parallel to each other and spaced apart from each otherwith a third pitch PTY2 greater than the first pitch PTY1. At least someof the plurality of real gate lines GL may be arranged parallel to eachother and spaced apart from each other with the second pitch PTX in thesecond horizontal direction (Y direction) and, although not shownseparately, at least two others thereof may be arranged parallel to eachother and spaced apart from each other with a pitch greater than thesecond pitch PTX.

In an exemplary embodiment, although all the plurality of dummy fin-typeactive regions FA in one edge dummy region EDR may be arranged parallelto each other and spaced apart from each other with the first pitchPTY1, some of the plurality of real fin-type active regions FA in thecell region CR may be arranged parallel to each other and spaced apartfrom each other with the first pitch PTY1, and some others thereof maybe arranged parallel to each other and spaced apart from each other apitch greater than the first pitch PTY1, for example, the third pitchPTY2 or a pitch of another value. In addition, although all theplurality of dummy gate lines GL in one edge dummy region EDR may bearranged parallel to each other and equally spaced apart from each otherwith the second pitch PTX, the plurality of real gate lines GL in thecell region CR may be arranged parallel to each other and spaced apartfrom each other with the second pitch PTY2, or may be arranged parallelto each other and be spaced apart from each other with a pitch ofanother value which is greater than the second pitch PTY2.

All the plurality of dummy fin-type active regions FA in one edge dummyregion EDR may have the same length in the first horizontal direction (Xdirection), and all the plurality of dummy gate lines GL in the one edgedummy region EDR may have the same length in the second horizontaldirection (Y direction).

For the simplicity of drawings, FIG. 5 shows that all the plurality ofreal fin-type active regions FA in the cell region CR have the samelength in the first horizontal direction (X direction), and all theplurality of dummy gate lines GL in the cell region CR have the samelength in the second horizontal direction (Y direction). The presentinvention is not limited thereto. In an exemplary embodiment, theplurality of real fin-type active regions FA in the cell region CR mayhave lengths of various values in the first horizontal direction (Xdirection), and the plurality of real gate lines GL in the cell regionCR may have lengths of various values in the second horizontal direction(Y direction).

In the edge dummy region EDR, a first device isolation film STI may bearranged between the plurality of fin-type active regions FA. In thecell region CR, the first device isolation film STI may be arranged inportions of spaces between the plurality of fin-type active regions FA,and a second device isolation film DTI may be arranged in the otherportions thereof. A bottom surface of the second device isolation filmDTI may have a lower level than a bottom surface of the first deviceisolation film STI, and in a vertical direction (Z direction), a heightof the second device isolation film DTI may be greater than a height ofthe first device isolation film STI. In some embodiments, a top surfaceof the first device isolation film STI and a top surface of the seconddevice isolation film DTI may have a substantially equal level. Thiswill be further described with reference to FIGS. 11 to 19 .

The second device isolation film DTI may be further arranged in theseparation region SR along the edge of the function block FB to surroundthe periphery of the function block FB.

The second device isolation film DTI may extend to surround one edge ofone edge dummy region EDR, which extends in the second horizontaldirection (Y direction) and faces the separation region SR, that is, thesecond edge EGY of the function block FB, and all edges thereof whichextend in the first horizontal direction (X direction) and face theseparation region SR. In an exemplary embodiment, the second deviceisolation film DTI may extend to surround the function block FB. Forexample, a first edge (i.e., the second edge EGY of the function blockFB) of the dummy region EDR, which extends in the second horizontaldirection (Y direction), is directly adjacent to the separation regionSR, and two second edges (i.e., each second edge corresponding to afirst edge EGX of the function block FB) thereof which extend in thefirst horizontal direction (X direction), are directly adjacent to theseparation region SR. The first device isolation film STI may extend topartially surround a third edge, opposite to the first edge in the firsthorizontal direction, of the edge dummy region EDR, which extends in thesecond horizontal direction (Y direction) and is directly adjacent tothe cell region CR. In some exemplary embodiments, the first deviceisolation film STI may extend to surround all portions of the third edgeof the edge dummy region EDR, which extends in the second horizontaldirection (Y direction) and is directly adjacent to the cell region CR.In some exemplary embodiments, the first device isolation film STI mayextend to surround a portion of the third edge of the edge dummy regionEDR, which extends in the second horizontal direction (Y direction) andis directly adjacent to the cell region CR, and the second deviceisolation film DTI may extend to surround the remaining edges (e.g., thefirst edge and the two second edges) of the edge dummy region EDR. In anexemplary embodiment, the first device isolation film STI may surroundeach of the plurality of dummy fin-type active regions FA. In anexemplary embodiment, the first device isolation film STI may beconnected to the second device isolation film DTI.

The plurality of real gate lines GL arranged in the cell region CR amongthe plurality of gate lines GL included in the function block FB may beformed to have line-widths and/or pitches which are preciselytransferred from patterns of a photomask during a photolithographyprocess and an etching process, due to the plurality of dummy gate linesGL arranged in the edge dummy region EDR. However, because there is noother gate line in the separation region SR, the plurality of dummy gatelines GL in the edge dummy region EDR may have line-widths and/orpitches deviated from patterns of a photomask and thus may havenon-uniform line-widths and/or pitches, and accordingly, at least someof the plurality of dummy gate lines GL may suffer from lifting and thuscause defects. Such non-uniformity of the etching process may be causedby a loading effect which refers to the dependence of etch rate on thequantity of material being etched, for example, in a plasma etchingprocess.

However, in the case of the plurality of dummy gate lines GL included inthe integrated circuit device 1 according to embodiments of theinventive concept, because there are the plurality of dummy fin-typeactive regions FA, which have the same first pitch PTY1 and the sameextension length, under the plurality of dummy gate lines GL, theuniformity of line-widths and/or pitches may be secured and the issue oflifting may not occur. For example, the plurality of dummy fin-typeactive regions FA may be arranged on the dummy edge region EDR, and theplurality of dummy gate lines GL on the dummy edge region EDR may bearranged with the same first pitch PTY1 and the same length of theplurality of dummy gate lines GL, and the plurality of dummy gate linesGL are arranged to intersect the plurality of dummy gate lines GL. Inthis case, the uniformity of line-widths and/or pitches of the pluralityof dummy gate lines GL may be secured to the extent that lifting thereofmay not occur. Therefore, the integrated circuit device 1 according toexemplary embodiments of the inventive concept may prevent defects,which may be caused by lifting of the dummy gate lines GL, and thussecure reliability.

FIG. 6 is an enlarged planar layout diagram illustrating a portion of anintegrated circuit device according to embodiments of the inventiveconcept. FIG. 6 is an enlarged planar layout diagram illustrating aportion of the function block FB, in which the second edge EGY isarranged along the edge of the integrated circuit devices 10 c, thefunction block FB having been shown in FIG. 4 , and, regarding FIG. 6 ,the same reference numerals as in FIGS. 4 and 5 respectively denotesubstantially the same members and repeated descriptions given withreference to FIGS. 4 and 5 may be omitted.

Referring to FIG. 6 , an integrated circuit device 1 a may have at leastone function block FB defined by the separation region SR. The functionblock FB may include the cell region CR, and the edge dummy region EDRarranged along a portion of the edge of the function block FB. The edgedummy region EDR may include a plurality of edge dummy regions EDRspaced apart from each other along the second edge EGY of the functionblock FB.

In some embodiments, between the plurality of edge dummy regions EDRspaced apart from each other along the second edge EGY of the functionblock FB, the first device isolation film STI may be arranged betweenthe plurality of dummy fin-type active regions FA. The second deviceisolation film DTI may extend to surround a first edge (i.e., the secondedge EGY of the function block FB) of the edge dummy region EDR, whichextends in the second horizontal direction (Y direction) and is directlyadjacent to the separation region SR, and each of two second edges ofthe edge dummy region which extends in the first horizontal direction (Xdirection) and is directly adjacent to the separation region SR. Thefirst device isolation film STI may extend to surround at least a thirdedge, opposite to the first edge, of the edge dummy region EDR, whichextends in the second horizontal direction (Y direction) and is directlyadjacent to the cell region CR.

FIG. 7 is an enlarged planar layout diagram illustrating a portion of anintegrated circuit device according to exemplary embodiments of theinventive concept. FIG. 7 is an enlarged planar layout diagramillustrating respective portions of two function blocks FB which areadjacent to each other and have been shown in FIGS. 1 and 2 , andregarding FIG. 7 , the same reference numerals as shown in FIGS. 1, 2,and 5 denote substantially the same members and repeated descriptionsgiven with reference to FIGS. 1, 2, and 5 may be omitted.

Referring to FIG. 7 , an integrated circuit device 1 b may have theplurality of function blocks FB defined by the separation region SR.Each of the plurality of function blocks FB may include the cell regionCR and the edge dummy region EDR that is arranged along a portion of theedge of the function block FB. The edge dummy region EDR may include aplurality of edge dummy regions EDR arranged apart from each other alongthe second edge EGY of the function block FB. For the convenience ofdescription, it is assumed that the integrated circuit device 1 bincludes a first function block FB1 and a second function block FB2adjacent thereto. The first function block FB1 may include a first cellregion CR1 and a first edge dummy region EDR1 that is arranged along aportion of the edge of the first function block FB1. The second functionblock FB2 may include a second cell region CR2 and a second edge dummyregion EDR2 that is arranged along a portion of the edge of the secondfunction block FB2.

The first dummy region EDR1 may be spaced apart from the second dummyregion EDR2.

Although some of the plurality of real fin-type active regions FA may bearranged parallel to each other while equally having the first pitchPTY1 in the first horizontal direction (X direction), at least twoothers thereof may be arranged parallel to each other while having thethird pitch PTY2 greater than the first pitch PTY1, and at least twoothers thereof may be arranged parallel to each other while having afourth pitch PTY3 that is greater than the first pitch PTY1 anddifferent from the third pitch PTY2. In an exemplary embodiment, some ofthe plurality of real fin-type active regions FA in the second functionblock FB2 may be arranged parallel to each other and equally spacedapart from each other with the first pitch PTY1 in the second horizontaldirection (Y direction), and at least two others thereof may be arrangedparallel to each other and spaced apart from each other with the thirdpitch PTY2, in the second horizontal direction, greater than the firstpitch PTY1. Some of the plurality of real fin-type active regions FA inthe first function block FB1 may be arranged parallel to each other andequally spaced apart from each other with the first pitch PTY1 in thesecond horizontal direction (Y direction), and at least two othersthereof may be arranged parallel to each other and spaced apart fromeach other with a fourth pitch PTY3 in the second horizontal directionthat is greater than the first pitch PTY1 and different from the thirdpitch PTY2. In an exemplary embodiment, the fourth pitch PTY3 may besmaller than the third pitch PTY2.

The second device isolation film DTI may extend to surround the secondedge EGY of each of the first function block FB1 and the second functionblock FB2. The second device isolation film DTI of the first functionblock FB1 and the second device isolation film DTI of the secondfunction block FB2 may be spaced apart from each other.

FIG. 8 is an enlarged planar layout diagram illustrating a portion of anintegrated circuit device according to exemplary embodiments of theinventive concept. FIG. 8 is an enlarged planar layout diagramillustrating respective portions of two function blocks FB which areadjacent to each other and have been shown in FIGS. 1 and 2 , andregarding FIG. 8 , the same reference numerals as in FIGS. 1, 2, 5, and7 denote substantially the same members and repeated descriptions givenwith reference to FIGS. 1, 2, 5, and 7 may be omitted.

Referring to FIG. 8 , an integrated circuit device 1 c may have theplurality of function blocks FB defined by the separation region SR.Each of the plurality of function blocks FB may include the cell regionCR and the edge dummy region EDR that is arranged along a portion of theedge of the function block FB. The edge dummy region EDR may include aplurality of edge dummy regions EDR arranged apart from each other alongthe second edge EGY of the function block FB. For the convenience ofdescription, it is assumed that the integrated circuit device 1 bincludes a first function block FB1 and a second function block FB2. Thefirst function block FB1 may include a first cell region CR1 and a firstedge dummy region EDR1 that is arranged along a portion of the edge ofthe first function block FB1. The second function block FB2 may includea second cell region CR2 and a second edge dummy region EDR2 that isarranged along a portion of the edge of the first function block FB1. Inan exemplary embodiment, the first edge dummy region EDR1 may include aplurality of edge dummy regions spaced apart from each other along thesecond edge EGY of the first function block FB1. In an exemplaryembodiment, the second dummy region EDR2 may include a plurality of edgedummy regions spaced apart from each other along the second edge EGY ofthe second function block FB2.

The first dummy region EDR1 may be spaced apart from the second dummyregion EDR2 in the first horizontal direction (X direction).

The second device isolation film DTI may be arranged between themutually-facing respective second edges EGY of the two adjacent functionblocks FB. As compared with FIG. 7 , the second device isolation filmDTI forming one body may be arranged between the mutually-facingrespective second edges EGY of the two adjacent function blocks FB inthe integrated circuit device 1 c. In an exemplary embodiment, a portionof the second device isolation film DTI may be arranged between thefirst function block FB1 and the second function block FB2 adjacentthereto. For example, the second device isolation film DTI may bearranged between the second edge EGY of the first function block FB1 andthe second edge EGY, adjacent thereto, of the second function block FB2.In FIG. 7 , the second device isolation film DT1 of the first functionblock FB1 and the second device isolation DT1 of the second functionblock FB2 are separated from each other. However, the integrated circuitdevice 1 c of FIG. 8 may include the second device isolation film DTIthat is formed in a single body, and the portion of the second deviceisolation film DTI may be arranged between the first function block FB1and the second function block FB2.

FIG. 9 is an enlarged planar layout diagram illustrating a portion of anintegrated circuit device according to exemplary embodiments of theinventive concept. FIG. 9 is an enlarged planar layout diagramillustrating respective portions of two adjacent function blocks FB inwhich at least two of the first edges EGX and the second edges EGY shownin FIG. 2 respectively face at least two other corresponding same-typeedges, and regarding FIG. 9 , the same reference numerals as in FIGS. 2,5, 7, and 8 respectively denote substantially the same members andrepeated descriptions given with reference to FIGS. 2, 5, 7, and 8 maybe omitted.

Referring to FIG. 9 , an integrated circuit device 1 d may have theplurality of function blocks FB defined by separation regions SR-X andSR-Y. Each of the plurality of function blocks FB may include the cellregion CR and the edge dummy region EDR that is arranged along a portionof the edge of the function block FB. The edge dummy region EDR mayinclude a plurality of edge dummy regions EDR arranged apart from eachother along the second edge EGY of the function block FB. For theconvenience of description, it is assumed that the integrated circuitdevice 1 d includes three function blocks such as a first function blockFB1, a second function block FB2 and a third function block FB3. Each ofthe three function blocks FB1 to FB3 may include a cell region CR and anedge dummy region EDR that is arranged along a portion of the edge of arespective function block. The edge dummy region EDR of the firstfunction block FB1 may be spaced apart from that of the second functionblock FB2 by a second separation region SR-X. The edge dummy region EDRof the second function block FB1 may be spaced apart from that of thethird function block FB3 by a first separation region SR-Y. The edgedummy region EDR of each of the three function blocks FB1 to FB3 may bealong the second edge EGY thereof.

The separation regions SR-X and SR-Y may include a first separationregion SR-Y, which is a portion between mutually-facing respective firstedges EGX of two adjacent function blocks FB, and a second separationregion SR-X, which is a portion between mutually-facing respectivesecond edges EGY of the two adjacent function blocks FB. In an exemplaryembodiment, the first separation region SR-Y may be a portion betweenthe first edge EGX of the second function block FB2 and the first edgeEGX of the third function block FB3 adjacent thereto in the secondhorizontal direction (Y direction). The second separation region SR-Xmay be a portion between the second edge EGY of the first function blockFB1 and the second edge EGY of the second function block FB2 adjacentthereto in the first horizontal direction (X direction).

The second device isolation film DTI extending to surround one of themutually-facing respective first edges EGX of the two adjacent functionblocks FB may be spaced apart from the second device isolation film DTIextending to surround the other one. That is, two second deviceisolation films DTI spaced apart from each other may be arranged in thesecond separation region SR-X. The second device isolation film DTIforming one body may be arranged between the mutually-facing respectivefirst edges EGX of the two adjacent function blocks FB. That is, onesecond device isolation film DTI forming one body may be arranged in thefirst separation region SR-Y. In an exemplary embodiment, the seconddevice isolation film DTI may include a first part extending along thefirst edge EGX of the second function block FB2 and the first edge EGXof the third function FB3, a second part extending along the second edgeEGY of the first function block FB1 and a third part extending along thesecond edge EGY of the second function block FB2. For example, thesecond part and the third part of the second device isolation film DTImay be spaced apart from each other with the second separation regionSR-X therebetween. The first part of the second device isolation filmDTI may be arranged between the second function block FB2 and the thirdfunction block FB3. For example, the first part of the second deviceisolation film DTI may be arranged in the first separation region SR-Y.In an exemplary embodiment, the first part, the second part and thethird part may be connected to each other to form a single body of thesecond device isolation film DTI.

FIG. 10 is an enlarged planar layout diagram illustrating a portion ofan integrated circuit device according to exemplary embodiments of theinventive concept. FIG. 10 is an enlarged planar layout diagramillustrating a portion of each of two adjacent function blocks FB inwhich at least two of the first edges EGX and the second edges EGY shownin FIG. 2 respectively face at least two other corresponding same-typeedges, and regarding FIG. 10 , the same reference numerals as in FIGS.2, 5, 7, 8, and 9 denote substantially the same members and repeateddescriptions given with reference to FIGS. 2, 5, 7, 8, and 9 may beomitted.

Referring to FIG. 10 , an integrated circuit device 1 e may have theplurality of function blocks FB defined by separation regions SR-X andSR-Y. Each of the plurality of function blocks FB may include the cellregion CR and the edge dummy region EDR that is arranged along a portionof the edge of the function block FB. The edge dummy region EDR mayinclude a plurality of edge dummy regions EDR arranged apart from eachother along the second edge EGY of the function block FB. For theconvenience of description, it is assumed that the integrated circuitdevice 1 e includes three function blocks such as a first function blockFB1, a second function block FB2, and a third function block FB3. Eachof the three function blocks FB1 to FB3 may include the cell region CRand the edge dummy region EDR that is arranged along a portion of theedge of a respective function block. The edge dummy region EDR of thefirst function block FB1 may be spaced apart from that of the secondfunction block FB2 by a second separation region SR-X. The edge dummyregion EDR of the second function block may be spaced apart from that ofthe third function block FB3 by a first separation region SR-Y. The edgedummy region EDR of each of the three function blocks FB1 to FB3 may bealong the second edge EGY thereof.

The second device isolation film DTI forming one body may be arrangedbetween mutually-facing respective second edges EGY of two adjacentfunction blocks FB. That is, one second device isolation film DTIforming one body may be arranged in the second separation region SR-X.The second device isolation film DTI forming one body may be arrangedbetween mutually-facing respective first edges EGX of the two adjacentfunction blocks FB. That is, one second device isolation film DTIforming one body may be arranged in the first separation region SR-Y. Inan exemplary embodiment, the second device isolation film DTI mayinclude a first part extending along the first edge EGX of each of thesecond function block FB2 and the third function block FB3, and a secondpart extending along the second edge EGY of each of the first functionblock FB1 and the second function block FB2. The first part and thesecond part may be connected to each other to form one body of thesecond device isolation film DTI. For example, the first part may bearranged in the second separation region SR-X disposed betweenrespective second edges EGY of two adjacent function blocks FB1 and FB2,and the second part may be arranged in the first separation region SR-Ydisposed between respective first edges EGX of two adjacent functionblocks FB2 and FB3. The second device isolation film DTI forming onebody may be arranged in the first separation region SR-Y and the secondseparation region SR-X.

Referring together to FIGS. 9 and 10 , because, in the integratedcircuit devices 1 d and 1 e according to exemplary embodiments of theinventive concept, the plurality of dummy gate lines GL may be uniformlyformed, there is no need to arrange, in the second separation regionSR-X, a separate structure for securing the uniformity of the pluralityof dummy gate lines GL. Therefore, even when a second hardmask pattern(HM2 of FIG. 15 ) for forming the plurality of gate lines GL is formedby a pattern density increasing technology using a spacer, such asDouble Patterning Technology (DPT) or Quadruple Patterning Technology(QPT), because the second hardmask pattern HM2 for forming the pluralityof dummy gate lines GL included in at least two adjacent function blocksFB may also be formed by the pattern density increasing technology usinga spacer, a trimming process for removing unnecessary portions of thespacer may not be performed on the first separation region SR-Y.Therefore, a first gap DGL between ends of the plurality of gate linesGL, which face each other with the first separation region SR-Ytherebetween, may be minimized. For example, the first gap DGL may havea value that is greater than the first pitch PTY1 and less than twicethe first pitch PTY1.

Referring to FIG. 10 , because, in the integrated circuit device 1 eaccording to exemplary embodiments of the inventive concept, theplurality of dummy gate lines GL may be uniformly formed, there is noneed to arrange, in the second separation region SR-X, a separatestructure for securing the uniformity of the plurality of dummy gatelines GL. Therefore, a second gap DFA between ends of the plurality offin-type active regions FA, that is, ends of the plurality of dummyfin-type active regions FA, which face each other with the secondseparation region SR-X therebetween, may be minimized. For example, thesecond gap DFA may have a value that is greater than the second pitchPTX and less than twice the second pitch PTX.

FIGS. 11 to 18 are cross-sectional views illustrating sequentialprocesses of a method of manufacturing an integrated circuit device,according to exemplary embodiments of the inventive concept, and FIG. 19is a cross-sectional view illustrating an integrated circuit deviceaccording to an exemplary embodiment of the inventive concept. FIGS. 11to 19 each illustrate example cross-sectional views respectively takenalong lines corresponding to lines X1-X2 and Y1-Y2 of FIG. 5 .

Referring to FIG. 11 , a plurality of first hardmask patterns HM1 areformed over a substrate 102 on which a buffer layer 122 is formed.

The substrate 102 may have an edge dummy region EDR and a separationregion SR. The substrate 102 may include a semiconductor material suchas Si or Ge, or a compound semiconductor material such as SiGe, SiC,GaAs, InAs, or InP. The substrate 102 may include a conductive region,for example, an impurity-doped well or an impurity-doped structure. Thebuffer layer 122 may include an insulating material. For example, thebuffer layer 122 may include oxide, nitride, or oxynitride.

The plurality of first hardmask patterns HM1 may be formed on the cellregion CR and the edge dummy region EDR. The plurality of first hardmaskpatterns HM1 may each have a stack structure including a first layer 124and a second layer 126 on the first layer 124. In some exemplaryembodiments, the plurality of first hardmask patterns HM1 may be formedby a pattern density increasing technology using a spacer, such as DPTor QPT. Each of the first layer 124 and the second layer 126 may includean insulating material such as oxide, nitride, oxynitride, polysilicon,and a carbon-containing film. In an exemplary embodiment, the firstlayer 124 may include an insulating material different from that of thesecond layer 126. The carbon-containing film may include aspin-on-hardmask (SOH) material. The SOH material may include ahydrocarbon compound or a derivative thereof, in which carbon is presentin a relatively high amount of about 85% by weight (wt %) to about 99 wt% based on a total weight of the SOH material.

The plurality of first hardmask patterns HM1 may be formed to extendparallel to each other in the first horizontal direction (X direction).In the edge dummy region EDR, the plurality of first hardmask patternsHM1 may be arranged parallel to each other and equally spaced apart fromeach other with the first pitch PTY1 in the second horizontal direction(Y direction). In the edge dummy region EDR, the plurality of firsthardmask patterns HM1 may have the same length in the first horizontaldirection (X direction).

Referring to FIGS. 11 and 12 , a portion of the substrate 102 is removedby using the plurality of first hardmask patterns HM1 as an etch mask,thereby forming a plurality of fin-type active regions FA, which aredefined by a first trench TR1 and protrude from a main surface 102M ofthe substrate 102. The main surface 102M of the substrate 102 may extendin horizontal directions (X-Y plane direction) at a first vertical levelLV1. In an exemplary embodiment, the first trench TR1 may include afirst bottom surface between two hardmask patterns adjacent to eachother and a second bottom surface located outside of the outermosthardmask pattern. The second bottom surface is lower than the firstbottom surface. Between two fin-type active regions FA spaced apart fromeach other with the first pitch PTY1, the first bottom surface of thefirst trench TR1 and the main surface 102M of the substrate 102 may beat the first vertical level LV1.

In some embodiments, the second bottom surface of the first trench TR1may be at a lower level than the first vertical level LV1.

During the formation of the plurality of fin-type active regions FA, aportion of each first hardmask pattern HM1, and a portion of the bufferlayer 122, which corresponds to the first trench TR1, may be removedtogether with the portion of the substrate 102. During the formation ofthe plurality of fin-type active regions FA, the portion of each firsthardmask pattern HM1, for example, the second layer 126, may be removed.

Referring to FIG. 13 , a first device isolation film 114 including aliner layer 114A and a first trench filling layer 114B is formed, theliner layer 114A covering the bottom surface and an inner side surfaceof the first trench TR1 and a top surface of the substrate 102, and thefirst trench filling layer 114B filling the inside of the first trenchTR1. In some exemplary embodiments, the liner layer 114A may includeoxide, nitride, or oxynitride. For example, the liner layer 114A mayinclude, but is not limited to, silicon oxide formed by thermaloxidation, silicon nitride (SiN), silicon oxynitride (SiON), siliconboronitride (SiBN), silicon carbide (SiC), SiC:H, SiCN, SiCN:H, SiOCN,SiOCN:H, silicon oxycarbide (SiOC), polysilicon, or a combinationthereof. The first trench filling layer 114B may include oxide formed bya deposition process or a coating process. For example, the first trenchfilling layer 114B may include, but is not limited to, fluoride silicateglass (FSG), undoped silicate glass (USG), boro-phospho-silicate glass(BPSG), phospho-silicate glass (PSG), flowable oxide (FOX), plasmaenhanced tetraethyl-ortho-silicate (PE-TEOS), or tonen silazene (TOSZ).The first trench filling layer 114B may be formed by forming apreliminary trench filling layer, which fills the first trench TR1 andcovers the top surface of the substrate 102, followed by removing aportion of the preliminary trench filling layer, which has a higherlevel than the top surface of the substrate 102. To form the firsttrench filling layer 114B, in some exemplary embodiments, during theremoval of the portion of the preliminary trench filling layer, thebuffer layer 122 may be used as an etch stop layer, and the first layer(124 of FIG. 12 ) may be removed together with the portion of thepreliminary trench filling layer.

After the first device isolation film 114 is formed, a portion of thefirst device isolation film 114 and a portion of the substrate 102 areremoved, thereby forming a second trench TR2, which has a bottom surfaceat a second vertical level LV2 lower than the first vertical level LV1.Next, a second device isolation film 116 is formed to fill at least aportion of the second trench TR2. In some exemplary embodiments, thesecond device isolation film 116 may partially fill the second trenchTR2, and a second trench filling layer 116F may be further formed tofill the remaining portion of the second trench TR2, which is not filledwith the second device isolation film 116. The second device isolationfilm 116 may include oxide. The second trench filling layer 116F mayinclude oxide. In an exemplary embodiment, the oxide of the seconddevice isolation film 116 and the oxide of the second trench fillinglayer 116F may be the same or different.

Referring to FIG. 14 , an upper portion of each of the first deviceisolation film 114 and the second device isolation film 116 is removedsuch that a top surface of the first device isolation film 114 and a topsurface of the second device isolation film 116 are at a fourth verticallevel LV4 which is higher than the first vertical level LV1 of the mainsurface 102M and lower than a third vertical level LV3 of a top surfaceof each fin-type active region FA. The first device isolation film 114and the second device isolation film 116 may respectively correspond tothe first device isolation film STI and the second device isolation filmDTI, which are shown in FIG. 5 . A bottom surface of the first deviceisolation film 114 may be at the first vertical level LV1, and a bottomsurface of the second device isolation film 116 may be at the secondvertical level LV2 lower than the first vertical level LV1.

The plurality of fin-type active regions FA may protrude, in fin shapes,upward from the first device isolation film 114. The first deviceisolation film 114 may cover lower portions of sidewalls of theplurality of fin-type active regions FA.

Referring to FIG. 15 , a sacrificial gate insulating material layerD143, which covers surfaces of the plurality of fin-type active regionsFA protruding upward from the first device isolation film 114, and asacrificial gate material layer D150, which covers the sacrificial gateinsulating material layer D143, are formed.

The sacrificial gate insulating material layer D143 may include, forexample, oxide. In some exemplary embodiments, the sacrificial gateinsulating material layer D143 may be formed, by a thermal oxidationprocess, to conformally cover the surfaces of the plurality of fin-typeactive regions FA protruding upward from the first device isolation film114.

The sacrificial gate material layer D150 may include, for example,polysilicon. The sacrificial gate material layer D150 may be formed witha sufficient thickness such that a top surface of the sacrificial gatematerial layer D150 is at a higher level than the top surfaces of theplurality of fin-type active regions FA.

A plurality of second hardmask patterns HM2 may be formed on thesacrificial gate material layer D150. The plurality of second hardmaskpatterns HM2 may be formed on the cell region CR and the edge dummyregion EDR. The plurality of second hardmask patterns HM2 may each havea stack structure including a third layer 132 and a fourth layer 134 onthe third layer 132. In some exemplary embodiments, the plurality ofsecond hardmask patterns HM2 may be formed by a pattern densityincreasing technology using a spacer, such as DPT or QPT. In someexemplary embodiments, each of the third layer 132 and the fourth layer134 may include an insulating material including oxide, nitride,oxynitride, polysilicon, or a carbon-containing film. In an exemplaryembodiment, the insulating material of the third layer 132 and theinsulating material of the fourth layer 134 may be different. Thecarbon-containing film may include an SOH material. The SOH material mayinclude a hydrocarbon compound or a derivative thereof, in which carbonis present in a relatively high amount of about 85 wt % to about 99 wt %based on a total weight of the SOH material. In some exemplaryembodiments, the third layer 132 may include polysilicon or aninsulating material such as oxide, nitride, oxynitride, or acarbon-containing film.

The plurality of second hardmask patterns HM2 may be formed to extendparallel to each other in the second horizontal direction (Y direction).In the edge dummy region EDR, the plurality of second hardmask patternsHM2 may be arranged parallel to each other and equally spaced apart fromeach other with the second pitch PTX in the first horizontal direction(X direction). In the edge dummy region EDR, the plurality of secondhardmask patterns HM2 may have the same length in the second horizontaldirection (Y direction).

Referring together to FIGS. 15 and 16 , a portion of the sacrificialgate material layer D150 and a portion of the sacrificial gateinsulating material layer D143 are removed by using the plurality ofsecond hardmask patterns HM2 as an etch mask, thereby forming aplurality of sacrificial gate lines D152 and a plurality of sacrificialgate insulating films D145. The plurality of sacrificial gate insulatingfilms D145 may be arranged between the plurality of fin-type activeregions FA and the plurality of sacrificial gate lines D152.

In some exemplary embodiments, portions of the plurality of secondhardmask patterns HM2 may remain on the plurality of sacrificial gatelines D152. For example, the third layer 132 may remain on each of theplurality of sacrificial gate lines D152.

Next, a plurality of gate spacers 140 are formed to cover opposite sidesurfaces of stack structures including the plurality of sacrificial gateinsulating films D145 and the plurality of sacrificial gate lines D152.The plurality of gate spacers 140 may each include, for example,nitride.

Referring together to FIGS. 16 and 17 , a plurality of source/drainregions 160 are formed in portions of each fin-type active region FA,the portions being exposed between the stack structures, which includethe plurality of sacrificial gate insulating films D145 and theplurality of sacrificial gate lines D152 and have opposite side surfacesthereof covered with the plurality of gate spacers 140. In someexemplary embodiments, the plurality of source/drain regions 160 may beformed by implanting impurities into the portions of each fin-typeactive region FA. In some exemplary embodiments, a plurality of recessesmay be formed by removing the portions of each fin-type active regionFA, the portions being exposed between the stack structures whichinclude the plurality of sacrificial gate insulating films D145 and theplurality of sacrificial gate lines D152 and have opposite side surfacesthereof covered with the plurality of gate spacers 140, and then, theplurality of source/drain regions 160 may be formed to fill theplurality of recesses, respectively. For example, the plurality ofsource/drain regions 160 may each include an epitaxially grown SiGelayer, an epitaxially grown Si layer, an epitaxially grown SiC layer, ora combination thereof.

A first interlayer insulating material layer is formed to cover thestack structures which include the plurality of sacrificial gateinsulating films D145 and the plurality of sacrificial gate lines D152and have opposite side surfaces thereof covered with the plurality ofgate spacers 140, and then, a first interlayer dielectric layer 172 isformed by removing an upper portion of the first interlayer insulatingmaterial layer such that top surfaces of the plurality of sacrificialgate lines D152 are exposed. The first interlayer dielectric layer 172may include oxide, nitride, or a combination thereof. The firstinterlayer dielectric layer 172 may be formed by removing the upperportion of the first interlayer insulating material layer through, forexample, a chemical mechanical polishing (CMP) process. To form thefirst interlayer dielectric layer 172, during the removal of the upperportion of the first interlayer insulating material layer, upperportions of the plurality of gate spacers 140 and the third layer 132remaining on each of the plurality of sacrificial gate lines D152 mayalso be removed.

The top surfaces of the plurality of sacrificial gate lines D152, topsurfaces of the plurality of gate spacers 140, and a top surface of thefirst interlayer dielectric layer 172 may be coplanar.

Referring together to FIGS. 17 and 18 , the plurality of sacrificialgate lines D152 and the plurality of sacrificial gate insulating filmsD145 are removed to form spaces, and then a plurality of gate insulatingfilms 145 are formed to cover bottom surfaces and inner side surfaces ofthe spaces which are between the plurality of gate spacers 140 and aplurality of gate lines 152 are formed to cover the plurality of gateinsulating films 145. The plurality of gate lines 152 may fill thespaces formed after the removal of the plurality of sacrificial gatelines D152 and the plurality of sacrificial gate insulating films D145.The plurality of gate lines 152 may correspond to the plurality of gatelines GL shown in FIG. 5 . For the convenience of description, theplurality of gate lines 152 may be used without identifying whether eachgate line is a real gate line or a dummy gate line. A gate line 152 onthe dummy region EDR is referred to as a dummy gate line, and a gateline 152 on the cell region CR is referred to as a real gate line.

The plurality of gate insulating films 145 and the plurality of gatelines 152 may each be formed by an atomic layer deposition (ALD)process, a chemical vapor deposition (CVD) process, a physical vapordeposition (PVD) process, a metal organic ALD (MOALD) process, or ametal organic CVD (MOCVD) process.

The plurality of gate insulating films 145 may each include a siliconoxide film, a high-K dielectric film, or a combination thereof. Thehigh-K dielectric film may include an insulating material having adielectric constant greater than that of the silicon oxide film. Thehigh-K dielectric film may include metal oxide or metal oxynitride. Aninterfacial film may be arranged between each fin-type active region FAand each gate insulating film 145. The interfacial film may include anoxide film, a nitride film, or an oxynitride film.

The plurality of gate lines 152 may each have a structure in which ametal nitride layer, a metal layer, a conductive capping layer, and agap-fill metal film are sequentially stacked in this stated order. Eachof the metal nitride layer and the metal layer may include at least onemetal selected from among Ti, Ta, W, Ru, Nb, Mo, and Hf. The gap-fillmetal film may include a W film or an Al film. Each of the plurality ofgate lines 152 may include a work function metal-containing layer. Thework function metal-containing layer may include at least one metalselected from among Ti, W, Ru, Nb, Mo, Hf, Ni, Co, Pt, Yb, Tb, Dy, Er,and Pd. In some exemplary embodiments, each of the plurality of gatelines 152 may include, but is not limited to, a stack structure ofTiAlC/TiN/W, a stack structure of TiN/TaN/TiAlC/TiN/W, or a stackstructure of TiN/TaN/TiN/TiAlC/TiN/W.

In some exemplary embodiments, the plurality of gate insulating films145 and the plurality of gate lines 152 may be formed to fill only lowerportions of the spaces which are between the plurality gate spacers 140and are formed after the removal of the plurality of sacrificial gatelines D152 and the plurality of sacrificial gate insulating films D145,and then, a plurality of gate capping layers 190 may be further formedto respectively fill the remaining portions of the spaces between theplurality gate spacers 140. The plurality of gate capping layers 190 mayeach include, for example, a nitride film or an oxynitride film. Anuppermost end of each of the plurality gate spacers 140 and a topsurface of each of the plurality of gate capping layers 190 may be atthe same vertical level.

Referring to FIG. 19 , a second interlayer dielectric 174 is formed, andthen, a plurality of first contact plugs 182 and a plurality of secondcontact plugs 184 are formed, the plurality of first contact plugs 182being electrically connected to the plurality of gate lines 152 throughthe second interlayer dielectric 174, and the plurality of secondcontact plugs 184 being electrically connected to the plurality ofsource/drain regions 160 through the second interlayer dielectric 174and the first interlayer dielectric layer 172. Although the plurality offirst contact plugs 182 are illustrated as being electrically connectedto the plurality of gate lines 152 on edge dummy regions EDR in FIG. 19, exemplary embodiments of the present inventive concept are not limitedthereto or thereby. In an exemplary embodiment, the plurality of firstcontact plugs 182 may be electrically connected to the plurality of gatelines 152 on the cell region CR.

In some exemplary embodiments, when the plurality of gate capping layers190 respectively cover top surfaces of the plurality of gate lines 152,the plurality of first contact plugs 182 may be electrically connectedto the plurality of gate lines 152 through the second interlayerdielectric 174 and the plurality of gate capping layers 190.

The plurality of first contact plugs 182 and the plurality of secondcontact plugs 184 may each include a conductive barrier film and a plugmaterial layer on the conductive barrier film. The conductive barrierfilm may include, for example, Ti, Ta, TiN, TaN, or a combinationthereof. The plug material layer may include, for example, metal such asW, Cu, Ti, Ta, Ru, Mn, or Co, metal nitride such as TiN, TaN, CoN, orWN, or an alloy such as cobalt tungsten phosphide (CoWP), cobalttungsten boron (CoWB), or cobalt tungsten boron phosphide (CoWBP).

In some exemplary embodiments, a silicide layer may be arranged betweeneach of the plurality of second contact plugs 184 and each of theplurality of source/drain regions 160. The silicide layer may include,for example, tungsten silicide (WSi), titanium silicide (TiSi), cobaltsilicide (CoSi), or nickel silicide (NiSi).

In the integrated circuit device 1 according to exemplary embodiments ofthe inventive concept, the plurality of dummy fin-type active regionsFA, having the same first pitch (PTY1 of FIG. 12 ) and having the samelength, may be disposed under the plurality of dummy gate lines 152arranged in the edge dummy region EDR, and thus the plurality of dummygate lines 152 may secure uniformity of line-widths and/or pitches tothe extent that some of the plurality of dummy gate lines 152 may beprevented from lifting. Therefore, the integrated circuit device 1according to exemplary embodiments of the inventive concept may preventdefects, which may be caused by lifting of the dummy gate lines GL, andthus secure reliability.

Although descriptions have been made with reference to examplecross-sectional views of FIGS. 11 to 19 , taken along lines X1-X2 andY1-Y2 of FIG. 5 , because it is apparent to those of ordinary skill inthe art that the components formed in other areas, for example, thefirst device isolation film STI, the second device isolation film DTI,the plurality of fin-type active regions FA, and the plurality of gatelines GL, which are formed in the cell region (CR of FIG. 5 ), may alsobe formed by identical or similar methods, descriptions thereof will beomitted.

Although the integrated circuit device 1, which has a fin-typetransistor (FinFET) including the fin-type active region FA, has beendescribed with reference to FIGS. 11 to 19 , the integrated circuitdevice according to the inventive concept is not limited thereto.

For example, the integrated circuit device according to the inventiveconcept may include a tunneling FET, a transistor including nanowires, aMulti-Bridge Channel FET (MBCFET®) that is a transistor includingnanosheets, or various 3-dimensional (3D) transistors.

FIG. 20 is a cross-sectional view illustrating an integrated circuitdevice according to an exemplary embodiment of the inventive concept.For example, an integrated circuit device having a transistor includingnanosheets will be described with reference to FIG. 20 , and regardingFIG. 20 , the same reference numerals as in FIG. 19 denote substantiallythe same members and repeated descriptions given with reference to FIG.19 may be omitted.

Referring to FIG. 20 , an integrated circuit device 2 includes theplurality of fin-type active regions FA, which protrude from thesubstrate 102 and extend in the first horizontal direction (Xdirection), and a plurality of nanosheet stack structures NSS, which aredisposed on the top surfaces of the plurality of fin-type active regionsFA and spaced apart from the top surfaces of the plurality of fin-typeactive regions FA. The first trench TR1, which defines the plurality offin-type active regions FA, may be formed in the substrate 102. Lowersidewalls of the plurality of fin-type active regions FA may be coveredwith the first device isolation film 114, which fills a lower portion ofthe first trench TR1.

Each of the plurality of nanosheet stack structures NSS may include aplurality of nanosheets N1, N2, and N3 extending, over the substrate102, parallel to the top surfaces of the plurality of fin-type activeregions FA. The plurality of nanosheets N1, N2, and N3 constituting onenanosheet stack structure NSS are sequentially stacked, one by one, onthe top surface of each fin-type active region FA. Although the presentexample illustrates that one nanosheet stack structure NSS includesthree nanosheets N1, N2, and N3, the inventive concept is not limitedthereto, and one nanosheet stack structure NSS may include variouslyselected numbers of nanosheets, as needed. Each of the plurality ofnanosheets N1, N2, and N3 may have a channel region.

A plurality of gate lines 152 a are arranged over the plurality offin-type active regions FA to extend in the second horizontal direction(Y direction) intersecting the first horizontal direction (X direction).The plurality of gate lines 152 a may at least partially overlap theplurality of nanosheet stack structures NSS in the vertical direction (Zdirection), respectively. A gate insulating film 145 a is formed betweeneach nanosheet stack structure NSS and each gate line 152 a.

Each of the plurality of gate lines 152 a may include a main gateportion 152M, which covers a top surface of a nanosheet stack structureNSS, and a plurality of sub-gate portions 152S, which are connected tothe main gate portion 152M and are formed in spaces between a fin-typeactive region FA and the plurality of nanosheets N1, N2, and N3, forexample, formed respectively under the plurality of nanosheets N1, N2,and N3. A second thickness, which is a thickness of each of theplurality of sub-gate portions 152S, may be less than a first thickness,which is a thickness of the main gate portion 152M. In an exemplaryembodiment, the first thickness of the main gate portion 152M and thesecond thickness of each of the plurality of sub-gate portions 152S eachdenote a size in the vertical direction (Z direction).

In some exemplary embodiments, the plurality of nanosheets N1, N2, andN3 may include a single material. In some exemplary embodiments, theplurality of nanosheets N1, N2, and N3 may include the same material asa constituent material of the substrate 102.

The plurality of source/drain regions 162 are respectively formed on theplurality of fin-type active regions FA. Each of the plurality ofsource/drain regions 162 is connected to one-side ends of the pluralityof nanosheets N1, N2, and N3.

A gate spacer 140 is formed on each of the plurality of nanosheet stackstructure NSS to cover a sidewall of each gate line 152 a. The gatespacer 140 may cover a sidewall of the main gate portion 152M of eachgate line 152 a.

An insulating spacer IS may be arranged in spaces between the respectiveplurality of nanosheets N1, N2, and N3, the insulating spacer IScontacting a source/drain region 162. The insulating spacer IS may bearranged between the sub-gate portion 152S and the source/drain region162, in spaces between the fin-type active region FA and the respectiveplurality of nanosheets N1, N2, and N3. In some exemplary embodiments,the insulating spacer IS may include a silicon nitride film. Theinsulating spacer IS may at least partially cover sidewalls of theplurality of sub-gate portions 152S, with the gate insulating film 145 adisposed therebetween.

The first interlayer dielectric layer 172 and the second interlayerdielectric 174 are sequentially formed on the plurality of source/drainregions 162 in this stated order. Each of the first interlayerdielectric layer 172 and the second interlayer dielectric 174 mayinclude, but is not limited to, a silicon oxide film.

The plurality of first contact plugs 182 may be electrically connectedto the plurality of gate lines 152 a through the second interlayerdielectric 174, and the plurality of second contact plugs 184 may beelectrically connected to the plurality of source/drain regions 162through the second interlayer dielectric 174 and the first interlayerdielectric layer 172. Although the plurality of first contact plugs 182are illustrated as being electrically connected to the plurality of gatelines 152 a on edge dummy regions EDR in FIG. 20 , exemplary embodimentsof the present inventive concept are not limited thereto or thereby. Inan exemplary embodiment, the plurality of first contact plugs 182 may beelectrically connected to the plurality of gate lines 152 a on the cellregion CR.

While the inventive concept has been particularly shown and describedwith reference to embodiments thereof, it will be understood thatvarious changes in form and details may be made therein withoutdeparting from the spirit and scope of the following claims.

What is claimed is:
 1. An integrated circuit device comprising: asubstrate having an intellectual property (IP) core, which is surroundedby a separation region and has at least two first edges extending in afirst horizontal direction and at least two second edges extending in asecond horizontal direction that intersects the first horizontaldirection, the IP core comprising a cell region and an edge dummy regionthat is arranged to extend along the at least two second edges; aplurality of fin-type active regions in the cell region, extending inthe first horizontal direction; a plurality of dummy fin-type activeregions in the edge dummy region; a plurality of gate lines in the cellregion, extending in the second horizontal direction, which intersectsthe first horizontal direction; a plurality of dummy gate lines in theedge dummy region; a plurality of gate capping layers on top surfacesthe plurality of gate lines an insulating interlayer dielectric layercovering the plurality of gate capping layers and the plurality of gatelines; and a plurality of first contact plugs electrically connected tothe plurality of gate lines through the insulating interlayer dielectricand the plurality of gate capping layers, wherein the edge dummy regionis disposed between the separation region and the cell region, andwherein a length, in the second horizontal direction, of the edge dummyregion is the same as a length, in the second horizontal direction, ofthe cell region.
 2. The integrated circuit device of claim 1, furthercomprising: a plurality of second contact plugs electrically connectedto a plurality of source/drain regions of the plurality of fin-typeactive regions through the insulating interlayer dielectric.
 3. Theintegrated circuit device of claim 1, further comprising: wherein, inthe edge dummy region, each of the plurality of dummy fin-type activeregions intersects all of the plurality of dummy gate lines, and each ofthe plurality of dummy gate lines intersects all of the plurality ofdummy fin-type active regions.
 4. The integrated circuit device of claim3, wherein the plurality of dummy fin-type active regions in the edgedummy region are arranged parallel to each other and equally spacedapart from each other with a first pitch in the second horizontaldirection, and wherein the plurality of dummy fin-type active regionshave the same length in the first horizontal direction.
 5. Theintegrated circuit device of claim 3, wherein the plurality of dummygate lines are arranged parallel to each other and equally spaced apartfrom each other with a second pitch in the first horizontal direction,and wherein the plurality of dummy gate lines have the same length of afirst length in the second horizontal direction, and wherein theplurality of gate lines includes at least two first gate lines havingthe same length of a second length in the second horizontal direction,the second length of the at least two first gate lines being equal tothe first length of the plurality of dummy gate lines.
 6. The integratedcircuit device of claim 1, further comprising: a plurality of nanosheetstack structures disposed on top surfaces of the plurality of fin-typeactive regions and spaced apart from the top surfaces of the pluralityof fin-type active regions, each of the plurality of nanosheet stackstructures comprising a plurality of nanosheets, wherein each of theplurality of gate lines comprises a main gate portion covering a topsurface of each nanosheet stack structure, and a plurality of sub-gateportions connected to the main gate portion and arranged respectivelyunder the plurality of nanosheets.
 7. The integrated circuit device ofclaim 1, further comprising: a first device isolation film coveringlower portions of sidewalls of the plurality of fin-type active regionsand having a bottom surface at a first vertical level; and a seconddevice isolation film having a bottom surface at a second vertical levelthat is lower than the first vertical level, wherein the second deviceisolation film extends along a first portion of an edge of the edgedummy region, wherein the first portion is directly adjacent to theseparation region, wherein the first device isolation film extends alonga second portion of the edge of the edge dummy region, and wherein thesecond portion is directly adjacent to the cell region.
 8. Theintegrated circuit device of claim 1, wherein the IP core comprises atleast two edge dummy regions, and wherein each of the at least two edgedummy regions is arranged to extend along a respective one of at leasttwo second edges of the IP core.
 9. An integrated circuit devicecomprising: a substrate having a plurality of intellectual property (IP)core, each of the plurality of IP core surrounded by a separationregion, having at least two first edges extending in a first horizontaldirection and at least two second edges extending in a second horizontaldirection that intersects the first horizontal direction, and comprisinga cell region and an edge dummy region that is arranged to extend alongthe at least two second edges; a plurality of dummy fin-type activeregions in the edge dummy region, and spaced apart from each other by afirst pitch in the edge dummy region; a plurality of fin-type activeregions in the cell region, extending in the first horizontal direction;a plurality of gate lines in the cell region, extending in the secondhorizontal direction, which intersects the first horizontal direction;and a plurality of dummy gate lines in the edge dummy region, and spacedapart from each other by a second pitch in the edge dummy region,wherein the separation region includes a first separation region, whichis a portion between mutually-facing respective first edges of twoadjacent IP cores among the plurality of IP core, and a secondseparation region, which is a portion between mutually-facing respectivesecond edges of two adjacent IP cores among the plurality of IP core,and wherein a first gap between ends of the plurality of gate lines,which face each other with the first separation region therebetween, hasa value that is greater than the first pitch and less than twice thefirst pitch.
 10. The integrated circuit device of claim 9, wherein asecond gap between ends of the plurality of dummy fin-type activeregions, which face each other with the second separation regiontherebetween, has a value that is greater than the second pitch and lessthan twice the second pitch.
 11. The integrated circuit device of claim9, wherein the plurality of dummy fin-type active regions have the samelength of a first length in the first horizontal direction, and whereinthe plurality of dummy gate lines have the same length of a secondlength in the second horizontal direction.
 12. The integrated circuitdevice of claim 11, wherein the plurality of gate lines includes atleast two first gate lines having the same length of a third length inthe second horizontal direction, the third length of the at least twofirst gate lines being equal to the second length of the plurality ofdummy gate lines.
 13. The integrated circuit device of claim 9, whereinthe edge dummy region is disposed between the separation region and thecell region, and wherein a length, in the second horizontal direction,of the edge dummy region is the same as a length, in the secondhorizontal direction, of the cell region.
 14. The integrated circuitdevice of claim 9, further comprising: a plurality of nanosheet stackstructures disposed on top surfaces of the plurality of fin-type activeregions and spaced apart from the top surfaces of the plurality offin-type active regions, each of the plurality of nanosheet stackstructures comprising a plurality of nanosheets, wherein each of theplurality of gate lines comprises a main gate portion covering a topsurface of each nanosheet stack structure, and a plurality of sub-gateportions connected to the main gate portion and arranged respectivelyunder the plurality of nanosheets.
 15. The integrated circuit device ofclaim 9, further comprising: a first device isolation film, whichdefines the plurality of fin-type active regions and fills a lowerportion of a first trench disposed between two fin-type active regions,adjacent to each other, of the plurality of fin-type active regions, thefirst trench having a bottom surface at a first vertical level; and asecond device isolation film filling a second trench, the second trenchextending through the first device isolation film and having a bottomsurface at a second vertical level that is lower than the first verticallevel, wherein the second device isolation film, in the separationregion, is configured to enclose the each of the plurality of IP coreand extend along each of at least two first edges and each of at leasttwo second edges, and wherein each of the at least two second edges isdirectly adjacent to the separation region.
 16. The integrated circuitdevice of claim 9, further comprising: a plurality of gate cappinglayers on top surfaces the plurality of gate lines an insulatinginterlayer dielectric layer covering the plurality of gate cappinglayers and the plurality of gate lines; a plurality of first contactplugs electrically connected to the plurality of gate lines through theinsulating interlayer dielectric and the plurality of gate cappinglayers; and a plurality of second contact plugs electrically connectedto a plurality of source/drain regions of the plurality of fin-typeactive regions through the insulating interlayer dielectric.
 17. Anintegrated circuit device comprising: a substrate having a plurality ofintellectual property (IP) core, each of the plurality of IP coresurrounded by a separation region, having at least two first edgesextending in a first horizontal direction and at least two second edgesextending in a second horizontal direction that intersects the firsthorizontal direction, and comprising a cell region and an edge dummyregion that is arranged to extend along the at least two second edges; aplurality of dummy fin-type active regions in the edge dummy region, andspaced apart from each other by a first pitch in the edge dummy region;a plurality of fin-type active regions in the cell region, extending inthe first horizontal direction; a plurality of gate lines in the cellregion, extending in the second horizontal direction, which intersectsthe first horizontal direction; a plurality of dummy gate lines in theedge dummy region, and spaced apart from each other by a second pitch inthe edge dummy region, a first device isolation film, which defines theplurality of fin-type active regions and fills a lower portion of afirst trench disposed between two fin-type active regions, adjacent toeach other, of the plurality of fin-type active regions, the firsttrench having a bottom surface at a first vertical level; and a seconddevice isolation film filling a second trench, the second trenchextending through the first device isolation film and having a bottomsurface at a second vertical level that is lower than the first verticallevel, wherein the edge dummy region is disposed between the separationregion and the cell region, and wherein a length, in the secondhorizontal direction, of the edge dummy region is the same as a length,in the second horizontal direction, of the cell region, wherein thesecond device isolation film, in the separation region, is configured toenclose the each of the plurality of IP core and extend along each of atleast two first edges and each of at least two second edges, and whereintwo portions of the second device isolation film, which extend tosurround mutually-facing respective second edges of two adjacent IPcores among the plurality of IP core is spaced apart from each other.18. The integrated circuit device of claim 17, further comprising:wherein, in the edge dummy region, each of the plurality of dummyfin-type active regions intersects all of the plurality of dummy gatelines, and each of the plurality of dummy gate lines intersects all ofthe plurality of dummy fin-type active regions, wherein the plurality ofdummy fin-type active regions have the same length of a first length inthe first horizontal direction, and wherein the plurality of dummy gatelines have the same length of a second length in the second horizontaldirection.
 19. The integrated circuit device of claim 17, wherein theeach of the plurality of IP core comprises at least two edge dummyregions, and wherein each of the at least two edge dummy regions isarranged to extend along a respective one of at least two second edgesof the IP core.
 20. The integrated circuit device of claim 17, furthercomprising: a plurality of nanosheet stack structures disposed on topsurfaces of the plurality of fin-type active regions and spaced apartfrom the top surfaces of the plurality of fin-type active regions, eachof the plurality of nanosheet stack structures comprising a plurality ofnanosheets, wherein each of the plurality of gate lines comprises a maingate portion covering a top surface of each nanosheet stack structure,and a plurality of sub-gate portions connected to the main gate portionand arranged respectively under the plurality of nanosheets.